CMKD6263DO_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL OPPOSING HIGH VOLTAGE SILICON SCHOTTKY DIODES

CMKD6263DO
SURFACE MOUNT
DUAL OPPOSING
HIGH VOLTAGE SILICON
SCHOTTKY DIODES
SOT-363 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKD6263DO
contains two (2) galvanically isolated, high voltage, low
VF Silicon Schottky diodes with an opposing Anode/
Cathode configuration, epoxy molded in a SOT-363
surface mount package. This ULTRAmini™ device has
been designed for fast switching applications requiring a
low forward voltage drop.
MARKING CODE: 63D
FEATURES:
• Dual Opposing (DO) Schottky Diodes
• High Voltage (70V)
MAXIMUM RATINGS: (TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
• Low Forward Voltage
• Galvanically Isolated
SYMBOL
VRRM
IF
IFSM
PD
TJ, Tstg
Θ_JA
70
15
50
250
-65 to +150
500
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
MAX
IR
VR=50V
BVR
IR=10μA
70
VF
IF=1.0mA
CT
VR=0, f=1.0MHz
trr
IR=IF=10mA, Irr=1.0mA, RL=100Ω
98
200
395
410
2.0
5.0
UNITS
V
mA
mA
mW
°C
°C/W
UNITS
nA
V
mV
pF
ns
R3 (13-January 2010)