CMKD6001_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT TRIPLE ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES

CMKD6001
SURFACE MOUNT
TRIPLE ISOLATED
LOW LEAKAGE SILICON
SWITCHING DIODES
SOT-363 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKD6001 type
contains three (3) Isolated Silicon Switching Diodes,
manufactured by the epitaxial planar process, epoxy
molded in a ULTRAmini™ surface mount package,
designed for switching applications requiring extremely
low leakage.
MARKING CODE: K01
MAXIMUM RATINGS: (TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
IF
IFRM
IFSM
IFSM
PD
TJ, Tstg
Θ_JA
75
100
250
500
4.0
1.0
250
-65 to +150
500
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
MAX
IR
VR=75V
500
BVR
IR=100μA
100
VF
IF=1.0mA
0.85
VF
IF=10mA
0.95
VF
IF=100mA
1.1
CT
VR=0, f=1.0MHz
2.0
trr
IR=IF=10mA, RL=100Ω Rec. to 1.0mA
3.0
UNITS
V
V
mA
mA
A
A
mW
°C
°C/W
UNITS
pA
V
V
V
V
pF
μs
R4 (13-January 2010)