CMKD6001 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT ULTRAmini TRIPLE ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES

CMKD6001
SURFACE MOUNT
ULTRAmini^™
TRIPLE ISOLATED
LOW LEAKAGE SILICON
SWITCHING DIODES
SOT-363 CASE
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKD6001
type contains three (3) Isolated Silicon Switching
Diodes, manufactured by the epitaxial planar
process, epoxy molded in a ULTRAmini^™ surface
mount package, designed for switching
applications requiring extremely low leakage.
MARKING CODE: K01
MAXIMUM RATINGS: (TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1 µsec.
Forward Surge Current, tp=1 sec.
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
IF
IFRM
IFSM
IFSM
PD
TJ,Tstg
Θ_JA
75
100
250
500
4000
1000
250
-65 to +150
500
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IR
BVR
VF
VF
VF
CT
trr
VR=75V
IR=100µA
100
IF=1.0mA
IF=10mA
IF=100mA
VR=0, f=1 MHz
IR=IF=10mA, RL=100Ω Rec. to 1.0mA
MAX
500
0.85
0.95
1.1
2.0
3.0
UNITS
V
V
mA
mA
mA
mA
mW
°C
°C/W
UNITS
pA
V
V
V
V
pF
µs
R2 (7-August 2003)