CMKD4448_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – HIGH SPEED SILICON SWITCHING DIODES

CMKD4448
SURFACE MOUNT
TRIPLE ISOLATED
HIGH SPEED SILICON
SWITCHING DIODES
SOT-363 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKD4448
type contains three (3) Isolated High Speed Silicon
Switching Diodes, manufactured by the epitaxial planar
process, epoxy molded in an ULTRAmini™ surface
mount package, designed for applications requiring
high speed switching applications.
MARKING CODE: K48
MAXIMUM RATINGS: (TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
IF
IFRM
IFSM
IFSM
PD
TJ, Tstg
Θ_JA
75
100
250
500
4.0
1.0
325
-65 to +175
461
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
MAX
IR
VR=20V
25
BVR
IR=5.0μA
75
BVR
IR=100μA
100
VF
IF=100mA
1.0
CT
VR=0, f=1.0MHz
4.0
trr
IR=IF=10mA, Irr=1.0mA, RL=100Ω
4.0
UNITS
V
V
mA
mA
A
A
mW
°C
°C/W
UNITS
nA
V
V
V
pF
ns
R6 (19-September 2011)