CMHD3595 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – LOW LEAKAGE SILICON DIODE

CMHD3595
LOW LEAKAGE
SILICON DIODE
SOD-123 CASE
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMHD3595
is a Silicon Diode, manufactured by the epitaxial
planar process, epoxy molded in a surface mount
package, designed for high conductance
applications requiring low leakage.
Marking Code is C95.
MAXIMUM RATINGS: (TA=25°C)
Peak Repetitive Reverse Voltage
Peak Working Reverse Voltage
Average Forward Current
Forward Steady-State Current
Recurrent Peak Forward Current
Peak Forward Surge Current (1.0s pulse)
Peak Forward Surge Current (1.0µs pulse)
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VRRM
VRWM
IO
IF
if
IFSM
IFSM
PD
TJ,Tstg
Θ_JA
150
125
150
225
600
500
4.0
400
-65 to +150
312.5
UNITS
V
V
mA
mA
mA
mA
A
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
MAX
BVR
IR=100µA
150
IR
VR=125V
1.0
IR
VR=125V, TA=125°C
500
IR
VR=125V, TA=150°C
3.0
IR
VR=30V, TA=125°C
300
VF
IF=1.0mA
0.54
0.69
VF
IF=5.0mA
0.62
0.77
VF
IF=10mA
0.65
0.80
VF
IF=50mA
0.75
0.88
VF
IF=100mA
0.79
0.92
VF
IF=200mA
0.83
1.00
CT
VR=0, f=1.0MHz
8.0
trr
VR=3.5V, If=10mA, RL=1.0kΩ
3.0
UNITS
V
nA
nA
µA
nA
V
V
V
V
V
V
pF
µs
R2 ( 2-November 2001)