CMFSH-3I_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL, ISOLATED SILICON SCHOTTKY DIODES

CMFSH-3i
SURFACE MOUNT
DUAL, ISOLATED
SILICON SCHOTTKY DIODES
SOT-143 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMFSH-3i
consists of two electrically isolated silicon Schottky
diodes packaged in an epoxy molded SOT-143 surface
mount case. This devices is designed fast switching
applications requiring a low forward voltage drop.
MARKING CODE: C3I
MAXIMUM RATINGS: (TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=10ms
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VRRM
IF
IFRM
IFSM
PD
TJ, Tstg
Θ_JA
30
100
200
750
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
IR
IR
BVR
VF
VF
VF
CT
trr
VR=25V
VR=25V, TA=100°C
IR=100μA
30
IF=2.0mA
IF=15mA
IF=100mA
VR=1.0V, f=1.0MHz
IF=IR=10mA, Irr=1.0mA, RL=100Ω
90
500
25
100
0.29
0.33
0.40
0.45
0.74
1.00
7.0
5.0
UNITS
V
mA
mA
mA
mW
°C
°C/W
UNITS
nA
μA
V
V
V
V
pF
ns
R5 (13-August 2010)