CMFSH-3I Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – DUAL, ISOLATED SILICON SCHOTTKY DIODES

CMFSH-3i
DUAL, ISOLATED
SILICON SCHOTTKY DIODES
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMFSH-3i
consists of two electrically isolated silicon
Schottky diodes packaged in an epoxy molded
SOT-143 surface mount case. This devices is
designed fast switching applications requiring a
low forward voltage drop.
MARKING CODE: C3I
SOT-143 CASE
MAXIMUM RATINGS: (TA=25 °C)
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=10ms
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
VRRM
IF
IFRM
IFSM
PD
TJ, Tstg
Θ_JA
30
100
200
750
350
-65 to +150
357
V
mA
mA
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25 °C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
IR
IR
BVR
VF
VF
VF
CT
trr
VR=25V
VR=25V, TA=100 °C
IR=100µA
30
IF=2.0mA
IF=15mA
IF=100mA
VR=1.0V, f=1.0MHz
IF=IR=10mA, Irr=1.0mA, RL=100Ω
90
500
25
100
0.29
0.33
0.40
0.45
0.74
1.00
7.0
5.0
UNITS
nA
µA
V
V
V
V
pF
ns
R3 (3-December 2003)