CMDSH-4E_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON SCHOTTKY DIODE

CMDSH-4E
ENHANCED SPECIFICATION
SURFACE MOUNT
SILICON SCHOTTKY DIODE
SOD-323 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMDSH-4E is an
Enhanced version of the CMDSH-3 Silicon Schottky
Diode in an SOD-323 Surface Mount Package.
ENHANCED SPECIFICATIONS:
♦ I_O from 100mA max to 200mA max.
♦ BVR from 30V min to 40V min.
♦ V_F from 1.0V max to 0.8V max.
MARKING CODE: S1E
MAXIMUM RATINGS: (TA=25°C)
♦Peak Repetitive Reverse Voltage
♦Average Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=10ms
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VRRM
IO
IFRM
IFSM
PD
TJ, Tstg
Θ_JA
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
IR
VR=25V
IR
VR=25V, TA=100°C
♦BVR
IR=100μA
40
VF
♦VF
♦VF
♦♦^VF
IF=2.0mA
IF=15mA
IF=100mA
IF=200mA
CT
VR=1.0V, f=1.0MHz
trr
IF=IR=10mA, Irr=1.0mA, RL=100Ω
♦ Enhanced specification.
♦♦ Additional Enhanced specification.
40
200
350
750
250
-65 to +150
500
TYP
MAX
90
500
25
100
50
0.29
0.33
0.37
0.42
0.61
0.80
0.65
1.0
7.0
5.0
UNITS
V
mA
mA
mA
mW
°C
°C/W
UNITS
nA
μA
V
V
V
V
V
pF
ns
R2 (8-January 2010)