CMDSH-4E Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – ENHANCED SPECIFICATION SCHOTTKY DIODE

CMDSH-4E
ENHANCED SPECIFICATION
SCHOTTKY DIODE
SOD-323 CASE
MAXIMUM RATINGS: (TA=25°C)
♦Peak Repetitive Reverse Voltage
♦Average Forward Current
Peak Repetitive Forward Voltage
Forward Surge Current, tp=10ms
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMDSH-4E
is an Enhanced version of the CMDSH-3 Silicon
Schottky Diode in an SOD-323 Surface Mount
Package.
ENHANCED SPECIFICATIONS:
♦ I_O from 100 mA max to 200 mA max.
♦ BVR from 30V min to 40 V min.
♦ V_F from 1.0 V max to 0.8 V max.
MARKING CODE: S1E
SYMBOL
VRRM
IO
IFRM
IFSM
PD
TJ, Tstg
Θ_JA
40
200
350
750
250
-65 to +150
500
UNITS
V
mA
mA
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
♦BVR
IR=100µA
40
50
VF
IF=2.0mA
0.29
♦VF
IF=15mA
0.37
♦VF
IF=100mA
0.61
♦♦VF
IF=200mA
0.65
IR
VR=25V
90
IR
VR=25V, TA=100°C
25
CT
VR=1.0V, f=1 MHz
7.0
trr
IF=IR=10mA, Irr=1.0mA, RL=100Ω
MAX
0.33
0.42
0.80
1.0
500
100
5.0
UNITS
V
V
V
V
V
nA
µA
pF
ns
♦ Enhanced specification.
♦♦ Additional Enhanced specification.
R0 (10-May 2004)