CMDD7006 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT VERY HIGH VOLTAGE SILICON SWITCHING DIODE

PRELIMINASURCRMYFADCDE70M0O6 UNT
VERY HIGH VOLTAGE
SILICON SWITCHING DIODE
Central^TM
Semiconductor Corp.
DESCRIPTION:
The Central Semiconductor CMDD7006 is a
silicon switching diode manufactured by the
epitaxial planar process and packaged in an
epoxy molded SOD-323 surface mount case.
This device is designed for applications
requiring high voltage switching diodes.
MARKING CODE: 6C7
SOD-323 CASE
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
PRELIMINARY ^{Continuous Reverse Voltage}
Peak Repetitive Reverse Voltage
Continous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1.0 µs
Forward Surge Current, tp=1.0 s
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
VR
VRRM
IF
IFRM
IFSM
IFSM
PD
TJ, Tstg
Θ_JA
600
600
100
300
4.0
1.0
250
-65 to +150
500
ELECTRICAL CHARACTERISTICS:
SYMBOL
IR
TEST CONDITIONS
VR=480V
(TA=25°C unless otherwise noted)
MIN
TYP MAX
7.0
100
IR
VR=480V, TA=150°C
100
BVR
IR=1.0µA
600
675
VF
IF=10mA
0.88
1.0
VF
IF=50mA
1.04
1.2
VF
IF=100mA
1.16
1.4
CT
VR=0V, f=1.0 MHz
5.0
trr
IR=IF=10mA, RL=100Ω, Rec. to 1.0mA
500
UNITS
V
V
mA
mA
A
A
mW
°C
°C/W
UNITS
nA
µA
V
V
V
V
pF
ns
R0 (12-January 2004)