CMBT3904E_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS

CMBT3904E NPN
CMBT3906E PNP
ENHANCED SPECIFICATION
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTORS
SOT-923 CASE
FEATURES
• Very Small Package Size
• 200mA Collector Current
• Low VCE(SAT) (0.1V Typ @ 50mA)
• Miniature 0.8 x 0.6 x 0.4mm
Ultra Low height profile
FEMTOmini™ Surface Mount Package
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMBT3904E
(NPN) and CMBT3906E (PNP) are general purpose
transistors with enhanced specifications. These
devices are ideal for applications where ultra small
size and power dissipation are the prime requirements.
Packaged in the FEMTOmini™ SOT-923 package,
these transistors provide performance characteristics
suitable for the most demanding size constrained
applications.
MARKING CODES: CMBT3904E: B
CMBT3906E: G
APPLICATIONS
• DC / DC Converters
• Voltage Clamping
• Protection Circuits
• Battery powered applications including:
Cell Phones, Digital Cameras, Pagers,
PDAs, Laptop Computers, etc.
MAXIMUM RATINGS: (TA=25°C)
♦Collector-Base Voltage
Collector-Emitter Voltage
♦Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
60
40
6.0
200
100
-65 to +150
1250
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
NPN
SYMBOL
TEST CONDITIONS
MIN
TYP
ICEV
♦ BVCBO
VCE=30V, VEB=3.0V
IC=10µA
60
115
BVCEO
♦ BVEBO
♦ VCE(SAT)
♦ VCE(SAT)
IC=1.0mA
IE=10µA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
40
60
6.0
7.5
0.057
0.100
VBE(SAT)
IC=10mA, IB=1.0mA
0.650
0.750
VBE(SAT)
IC=50mA, IB=5.0mA
0.850
♦ Enhanced specification.
PNP
TYP
90
55
7.9
0.050
0.100
0.750
0.850
MAX
50
0.100
0.200
0.850
0.950
UNITS
nA
V
V
V
V
V
V
V
R1 (8-January 2010)