CLL3595 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT LOW LEAKAGE SILICON DIODE

CLL3595
SURFACE MOUNT
LOW LEAKAGE SILICON DIODE
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CLL3595
type is an epitaxial planar silicon diode,
manufactured in a hermetically sealed glass
surface mount package, designed for low
leakage, high conductance applications.
SOD-80 CASE
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
Peak Working Reverse Voltage
Average Forward Current
Forward Steady-State Current
Recurrent Peak Forward Current
Peak Forward Surge Current (1.0s pulse)
Peak Forward Surge Current (1.0µs pulse)
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
VRRM
VRWM
IO
IF
if
IFSM
IFSM
PD
TJ,Tstg
Θ_JA
150
125
150
225
600
500
4.0
500
-65 to +200
350
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
V
V
mA
mA
mA
mA
A
mW
°C
°C/W
UNITS
BVR
IR
IR
IR
IR
VF
VF
VF
VF
VF
VF
CT
trr
IR=100µA
150
VR=125V
VR=125V, TA=125°C
VR=125V, TA=150°C
VR=30V, TA=125°C
IF=1.0mA
0.54
IF=5.0mA
0.62
IF=10mA
0.65
IF=50mA
0.75
IF=100mA
0.79
IF=200mA
0.83
VR=0, f=1.0MHz
VR=3.5V, If=10mA, RL=1.0kΩ
V
1.0
nA
500
nA
3.0
µA
300
nA
0.69
V
0.77
V
0.80
V
0.88
V
0.92
V
1.00
V
8.0
pF
3.0
µs
R1 ( 25-September 2001)