CJD47_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON NPN POWER TRANSISTORS

CJD47
CJD50
SURFACE MOUNT SILICON
NPN POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD47 and CJD50
are silicon NPN power transistors manufactured in
a surface mount package, and designed for high
voltage applications such as power supplies and other
switching applications.
MARKING: FULL PART NUMBER
DPAK CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Collector Current
ICM
Continuous Base Current
IB
Power Dissipation
PD
Power Dissipation (TA=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
Θ_JC
Thermal Resistance
Θ_JA
CJD47
350
CJD50
500
250
400
5.0
1.0
2.0
600
15
1.56
-65 to +150
8.33
80.1
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEO
VCE=150V (CJD47)
ICEO
VCE=300V (CJD50)
ICES
VCE=350V (CJD47)
ICES
VCE=500V (CJD50)
IEBO
VEB=5.0V
BVCEO
IC=30mA (CJD47)
250
BVCEO
IC=30mA (CJD50)
400
VCE(SAT) IC=1.0A, IB=200mA
VBE(ON)
VCE=10V, IC=1.0A
hFE
VCE=10V, IC=300mA
30
hFE
VCE=10V, IC=1.0A
10
fT
VCE=10V, IC=200mA, f=2.0MHz
10
hfe
VCE=10V, IC=200mA, f=1.0kHz
25
MAX
200
200
100
100
1.0
1.0
1.5
150
UNITS
V
V
V
A
A
mA
W
W
°C
°C/W
°C/W
UNITS
μA
μA
μA
μA
mA
V
V
V
V
MHz
R3 (21-January 2013)