CJD47_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT NPN SILICON POWER TRANSISTOR

CJD47
CJD50
SURFACE MOUNT
NPN SILICON
POWER TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD47, CJD50
types are NPN Silicon Power Transistors manufactured
in a surface mount package designed for high voltage
applications such as power supplies and other
switching applications.
MARKING: FULL PART NUMBER
DPAK TRANSISTOR CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Power Dissipation (TA=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
PD
TJ, Tstg
Θ_JC
Θ_JA
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICEO
VCE=150V (CJD47)
ICEO
VCE=300V (CJD50)
ICES
VCE=350V (CJD47)
ICES
VCE=500V (CJD50)
IEBO
VEB=5.0V
BVCEO
IC=30mA (CJD47)
250
BVCEO
IC=30mA (CJD50)
400
VCE(SAT)
IC=1.0A, IB=200mA
VBE(ON)
VCE=10V, IC=1.0A
hFE
VCE=10V, IC=300mA
30
hFE
VCE=10V, IC=1.0A
10
fT
VCE=10V, IC=200mA, f=2.0MHz
10
hfe
VCE=10V, IC=200mA, f=1.0kHz
25
CJD47
CJD50
350
500
250
400
5.0
1.0
2.0
600
15
1.56
-65 to +150
8.33
80.1
UNITS
V
V
V
A
A
mA
W
W
°C
°C/W
°C/W
MAX
200
200
100
100
1.0
1.0
1.5
150
UNITS
µA
µA
µA
µA
mA
V
V
V
V
MHz
R2 (4-January 2010)