CJD44H11_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS

CJD44H11 NPN
CJD45H11 PNP
SURFACE MOUNT
COMPLEMENTARY SILICON
POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD44H11,
CJD45H11 types are Complementary Silicon Power
Transistors manufactured in a surface mount
package designed for switching and power amplifier
applications.
MARKING: FULL PART NUMBER
DPAK TRANSISTOR CASE
MAXIMUM RATINGS: (TC=25ºC unless otherwise noted)
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Power Dissipation (TA=25ºC)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCEO
VEBO
IC
ICM
PD
PD
TJ, Tstg
Θ_JC
Θ_JA
80
5.0
8.0
16
20
1.75
-65 to +150
6.25
71.4
UNITS
V
V
A
A
W
W
ºC
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS: (TC=25ºC unless otherwise noted)
SYMBOL
TEST CONDITIONS
ICES
IEBO
BVCEO
VCE(SAT)
VBE(SAT)
hFE
hFE
fT
fT
Cob
Cob
td + tr
td + tr
ts
tf
tf
VCE=80V
VEB=5.0V
IC=30mA
IC=8.0A, IB=400mA
IC=8.0A, IB=800mA
VCE=1.0V, IC=2.0A
VCE=1.0V, IC=4.0A
VCE=10V, IC=500mA, f=20MHz (CJD44H11)
VCE=10V, IC=500mA, f=20MHz (CJD45H11)
VCB=10V, IE=0, f=0.1MHz (CJD44H11)
VCB=10V, IE=0, f=0.1MHz (CJD45H11)
IC=5.0A, IB1=500mA (CJD44H11)
IC=5.0A, IB1=500mA (CJD45H11)
IC=5.0A, IB1=IB2=500mA (CJD44H11, CJD45H11)
IC=5.0A, IB1=IB2=500mA (CJD44H11)
IC=5.0A, IB1=IB2=500mA (CJD45H11)
MIN
TYP MAX UNITS
10
µA
50
µA
80
V
1.0
V
1.5
V
60
40
60
MHz
50
MHz
120
pF
220
pF
320
ns
150
ns
450
ns
130
ns
100
ns
R2 (4-January 2010)