CJD41C_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS

CJD41C NPN
CJD42C PNP
SURFACE MOUNT
COMPLEMENTARY SILICON
POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD41C, CJD42C
types are Complementary Silicon Power Transistors
manufactured by the epitaxial base process, mounted
in a surface mount package designed for power
amplifier and high speed switching applications.
MARKING: FULL PART NUMBER
DPAK TRANSISTOR CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Power Dissipation (TA=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
PD
TJ, Tstg
Θ_JC
Θ_JA
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICEO
VCE=60V
ICES
VCE=100V
IEBO
VEB=5.0V
BVCEO
IC=30mA
100
VCE(SAT)
IC=6.0A, IB=600mA
VBE(ON)
VCE=4.0V, IC=6.0A
hFE
VCE=4.0V, IC=300mA
30
hFE
VCE=4.0V, IC=3.0A
15
fT
VCE=10V, IC=500mA, f=1.0MHz
3.0
hfe
VCE=10V, IC=500mA, f=1.0kHz
20
100
100
5.0
6.0
10
2.0
20
1.75
-65 to +150
6.25
71.4
MAX
50
10
500
1.5
2.0
75
UNITS
V
V
V
A
A
A
W
W
°C
°C/W
°C/W
UNITS
µA
µA
µA
V
V
V
MHz
R2 (4-January 2010)