CJD41C Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – COMPLEMENTARY SILICON POWER TRANSISTOR

CJD41C NPN
CJD42C PNP
Central^TM
Semiconductor Corp.
COMPLEMENTARY SILICON
POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD41C,
CJD42C types are Complementary Silicon Power
Transistors manufactured by the epitaxial base
process, mounted in a surface mount package
designed for power amplifier and high speed
switching applications.
MARKING CODE: FULL PART NUMBER
DPAK TRANSISTOR CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
Power Dissipation
Power Dissipation (TA=25°C)
Operating and Storage
VCBO
VCEO
VEBO
IC
ICM
IB
PD
PD
Junction Temperature
Thermal Resistance
Thermal Resistance
TJ,Tstg
Θ_JC
Θ_JA
100
100
5.0
6.0
10
2.0
20
1.75
-65 to +150
6.25
71.4
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
UNITS
V
V
V
A
A
A
W
W
°C
°C/W
°C/W
SYMBOL
ICEO
ICES
IEBO
BVCEO
VCE(SAT)
VBE(ON)
hFE
hFE
fT
hfe
TEST CONDITIONS
MIN
VCE=60V
VCE=100V
VEB=5.0V
IC=30mA
100
IC=6.0A, IB=600mA
VCE=4.0V, IC=6.0A
VCE=4.0V, IC=300mA
30
VCE=4.0V, IC=3.0A
15
VCE=10V, IC=500mA, f=1.0MHz
3.0
VCE=10V, IC=500mA, f=1.0kHz
20
MAX
50
10
500
1.5
2.0
75
UNITS
µA
µA
µA
V
V
V
MHz
R1 (26-September 2002)