CJD2955PNP Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – silicon power transistors

CJD2955 PNP
CJD3055 NPN
SURFACE MOUNT SILICON
COMPLEMENTARY
POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD2955 and
CJD3055 are complementary silicon power transistors
manufactured by the epitaxial base process, mounted
in a surface mount package, and designed for high
current amplifier and switching applications.
MARKING: FULL PART NUMBER
DPAK CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Continuous Base Current
IB
Power Dissipation
PD
Power Dissipation (TA=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
Θ_JC
Thermal Resistance
Θ_JA
70
60
5.0
10
6.0
20
1.75
-65 to +150
6.25
71.4
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEO
VCE=30V
ICEV
VCE=70V, VBE(off)=1.5V
ICEV
VCE=70V, VBE(off)=1.5V, TC=150°C
ICBO
VCB=70V
ICBO
VCB=70V, TC=150°C
IEBO
VEB=5.0V
BVCEO
IC=30mA
60
VCE(SAT) IC=4.0A, IB=400mA
VCE(SAT) IC=10A, IB=3.3A
VBE(ON)
VCE=4.0V, IC=4.0A
hFE
VCE=4.0V, IC=4.0A
20
hFE
VCE=4.0V, IC=10A
5.0
fT
VCE=10V, IC=500mA, f=1.0MHz
2.0
MAX
50
20
2.0
20
2.0
500
1.1
8.0
1.8
100
UNITS
V
V
V
A
A
W
W
°C
°C/W
°C/W
UNITS
μA
μA
mA
μA
mA
μA
V
V
V
V
MHz
R4 (21-January 2013)