CJD200_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS

CJD200 NPN
CJD210 PNP
SURFACE MOUNT
COMPLEMENTARY SILICON
POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD200, CJD210
types are Complementary Silicon Power Transistors
manufactured in a surface mount package designed for
high current amplifier applications.
MARKING: FULL PART NUMBER
DPAK TRANSISTOR CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Power Dissipation (TA=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
PD
TJ, Tstg
Θ_JC
Θ_JA
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=40V
ICBO
VCB=40V, TC=125°C
IEBO
VEB=8.0V
BVCEO
IC=10mA
25
VCE(SAT)
IC=500mA, IB=50mA
VCE(SAT)
IC=2.0A, IB=200mA
VCE(SAT)
IC=5.0A, IB=1.0A
VBE(SAT)
IC=5.0A, IB=1.0A
VBE(ON)
VCE=1.0V, IC=2.0A
hFE
VCE=1.0V, IC=500mA
70
hFE
VCE=1.0V, IC=2.0A
45
hFE
VCE=2.0V, IC=5.0A
10
fT
VCE=10V, IC=100mA, f=10MHz
65
Cob
VCB=10V, IE=0, f=0.1MHz (CJD200)
Cob
VCB=10V, IE=0, f=0.1MHz (CJD210)
40
25
8.0
5.0
10
1.0
12.5
1.4
-65 to +150
10
89.3
UNITS
V
V
V
A
A
A
W
W
°C
°C/W
°C/W
MAX
100
100
100
0.3
0.75
1.8
2.5
1.6
180
80
120
UNITS
nA
µA
nA
V
V
V
V
V
V
MHz
pF
pF
R2 (4-January 2010)