CJD13003 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – NPN SILICON POWER TRANSISTOR

CJD13003
SURFACE MOUNT
NPN SILICON
POWER TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD13003 type
is an NPN Silicon Power Transistor manufactured in a
surface mount package designed for high voltage, high
speed power switching inductive applications.
MARKING: FULL PART NUMBER
DPAK TRANSISTOR CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Peak Base Current
Continuous Emitter Current
Peak Emitter Current
Power Dissipation
Power Dissipation (TA=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCEV
VCEO
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
PD
TJ, Tstg
Θ_JC
Θ_JA
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICEV
VCE=700V, VBE(off)=1.5V
ICEV
VCE=700V, VBE(off)=1.5V, TC=100°C
IEBO
VEB=9.0V
BVCEO
IC=10mA
400
VCE(SAT)
IC=500mA, IB=100mA
VCE(SAT)
IC=1.0A, IB=250mA
VCE(SAT)
IC=1.5A, IB=500mA
VCE(SAT)
IC=1.0A, IB=250mA, TC=100°C
VBE(SAT)
IC=500mA, IB=100mA
VBE(SAT)
IC=1.0A, IB=250mA
VBE(SAT)
IC=1.0A, IB=250mA, TC=100°C
hFE
VCE=2.0V, IC=500mA
8.0
hFE
VCE=2.0V, IC=1.0A
5.0
fT
VCE=10V, IC=100mA, f=1.0MHz
4.0
Cob
VCB=10V, IE=0, f=0.1MHz
700
400
9.0
1.5
3.0
750
1.5
2.25
4.5
15
1.56
-65 to +150
8.33
80.1
UNITS
V
V
V
A
A
mA
A
A
A
W
W
°C
°C/W
°C/W
TYP
MAX
UNITS
100
μA
2.0
mA
1.0
mA
V
0.5
V
1.0
V
3.0
V
1.0
V
1.0
V
1.2
V
1.1
V
40
25
MHz
20
pF
R2 (4-January 2010)