CJD122_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

CJD122 NPN
CJD127 PNP
SURFACE MOUNT
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD122, CJD127
types are Complementary Silicon Power Darlington
Transistors manufactured in a surface mount package
designed for low speed switching and amplifier
applications.
MARKING: FULL PART NUMBER
DPAK TRANSISTOR CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Power Dissipation (TA=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
PD
TJ, Tstg
Θ_JC
Θ_JA
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICEO
ICEV
ICEV
ICBO
IEBO
BVCEO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
hFE
fT
Cob
Cob
hfe
VCE=50V
VCE=100V, VBE(off)=1.5V
VCE=100V, VBE(off)=1.5V, TC=125°C
VCB=100V
VEB=5.0V
IC=30mA
IC=4.0A, IB=16mA
IC=8.0A, IB=80mA
IC=8.0A, IB=80mA
VCE=4.0V, IC=4.0A
VCE=4.0V, IC=4.0A
VCE=4.0V, IC=8.0A
VCE=4.0V, IC=3.0A, f=1.0MHz
VCB=10V, IE=0, f=1.0MHz (CJD122)
VCB=10V, IE=0, f=1.0MHz (CJD127)
VCE=4.0V, IC=3.0A, f=1.0kHz
100
1000
100
4.0
100
100
5.0
8.0
16
120
20
1.75
-65 to +150
6.25
71.4
UNITS
V
V
V
A
A
mA
W
W
°C
°C/W
°C/W
MAX
10
10
500
10
2.0
2.0
4.0
4.5
2.8
12000
200
300
300
UNITS
µA
µA
µA
µA
mA
V
V
V
V
V
MHz
pF
pF
R2 (4-January 2010)