CJD112_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

CJD112 NPN
CJD117 PNP
SURFACE MOUNT
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD112, CJD117
types are Complementary Silicon Power Darlington
Transistors manufactured in a surface mount package
designed for low speed switching and amplifier
applications.
MARKING: FULL PART NUMBER
DPAK TRANSISTOR CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Power Dissipation (TA=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
PD
TJ, Tstg
Θ_JC
Θ_JA
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICEO
ICEV
ICEV
ICBO
ICBO
IEBO
BVCEO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
hFE
hFE
fT
Cob
Cob
VCE=50V
VCE=80V, VBE(off)=1.5V
VCE=80V, VBE(off)=1.5V, TC=125°C
VCB=80V
VCB=100V
VEB=5.0V
IC=30mA
IC=2.0A, IB=8.0mA
IC=4.0A, IB=40mA
IC=4.0A, IB=40mA
VCE=3.0V, IC=2.0A
VCE=3.0V, IC=0.5A
VCE=3.0V, IC=2.0A
VCE=3.0V, IC=4.0A
VCE=10V, IC=750mA, f=1.0MHz
VCB=10V, IE=0, f=0.1MHz (CJD112)
VCB=10V, IE=0, f=0.1MHz (CJD117)
500
1000
200
25
100
100
5.0
2.0
4.0
50
20
1.75
-65 to +150
6.25
71.4
UNITS
V
V
V
A
A
mA
W
W
°C
°C/W
°C/W
MAX
20
10
500
10
20
2.0
100
2.0
3.0
4.0
2.8
UNITS
µA
µA
µA
µA
µA
mA
V
V
V
V
V
12000
MHz
100
pF
200
pF
R2 (4-January 2010)