CJD112 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR

CJD112 NPN
CJD117 PNP
SURFACE MOUNT SILICON
COMPLEMENTARY
POWER DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD112 and
CJD117 are complementary silicon power Darlington
transistors manufactured in a surface mount package
designed for low speed switching and amplifier
applications.
MARKING: FULL PART NUMBER
DPAK CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Collector Current
ICM
Continuous Base Current
IB
Power Dissipation
PD
Power Dissipation (TA=25°C)
PD
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
TJ, Tstg
Θ_JC
Θ_JA
100
100
5.0
2.0
4.0
50
20
1.75
-65 to +150
6.25
71.4
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEO
ICEV
ICEV
ICBO
ICBO
IEBO
BVCEO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
hFE
hFE
fT
Cob
Cob
VCE=50V
VCE=80V, VBE(off)=1.5V
VCE=80V, VBE(off)=1.5V, TC=125°C
VCB=80V
VCB=100V
VEB=5.0V
IC=30mA
IC=2.0A, IB=8.0mA
IC=4.0A, IB=40mA
IC=4.0A, IB=40mA
VCE=3.0V, IC=2.0A
VCE=3.0V, IC=0.5A
VCE=3.0V, IC=2.0A
VCE=3.0V, IC=4.0A
VCE=10V, IC=750mA, f=1.0MHz
VCB=10V, IE=0, f=0.1MHz (CJD112)
VCB=10V, IE=0, f=0.1MHz (CJD117)
500
1000
200
25
MAX
20
10
500
10
20
2.0
100
2.0
3.0
4.0
2.8
12000
100
200
UNITS
V
V
V
A
A
mA
W
W
°C
°C/W
°C/W
UNITS
μA
μA
μA
μA
μA
mA
V
V
V
V
V
MHz
pF
pF
R3 (21-January 2013)