CFMS4 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL, COMMON BASE, SILICON PNP TRANSISTORS

CFMS4
SURFACE MOUNT
DUAL, COMMON BASE,
SILICON PNP TRANSISTORS
SOT-25 CASE
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CFMS4
consists of two silicon PNP transistors in a
common base configuration, manufactured by the
epitaxial planar process and epoxy molded in a
space saving SOT-25 surface mount package.
This device has been designed for small signal
applications where a high breakdown voltage is
required.
MARKING CODE: CFMS4
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
120
120
5.0
50
350
-65 to +150
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP MAX
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
hFE
fT
VCB=100V
VEB=4.0V
IC=50µA
IC=1.0mA
IE=50µA
IC=10mA, IB=1.0 mA
VCE=6.0V, IC=2.0mA
VCE=12V, IE=2.0mA, f=100MHz
500
500
120
120
5.0
500
180
820
140
UNITS
V
V
V
mA
mW
°C
UNITS
nA
nA
V
V
V
mV
MHz
R0 (20-July 2004)