CET3904E_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS

CET3904E NPN
CET3906E PNP
ENHANCED SPECIFICATION
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTORS
SOT-883L CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CET3904E /
CET3906E Low VCE(SAT) NPN and PNP Transistors,
respectively, are designed for applications where
ultra small size and power dissipation are the prime
requirements. Packaged in a Tiny Leadless Package
TLP™, these components provide performance
characteristics suitable for the most demanding size
constrained applications.
MARKING CODES: CET3904E: C
CET3906E: D
FEATURES:
• Device is Halogen Free by design
• 250mW Power Dissipation
• Low VCE(SAT) 0.1V Typ @ 50mA
• Small, TLP™ 1x0.4mm, SOT-883L Leadless,
Low Profile, Surface Mount Package
APPLICATIONS:
• DC / DC Converters
• Battery powered devices including Cell Phones
and Digital Cameras
MAXIMUM RATINGS: (TA=25°C)
♦ Collector-Base Voltage
Collector-Emitter Voltage
♦ Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
Thermal Resistance (Note 2)
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
Θ_JA
Θ_JA
ELECTRICAL CHARACTERISTICS:
SYMBOL TEST CONDITIONS
MIN
ICEV
VCE=30V, VEB=3.0V
♦ BVCBO
IC=10µA
60
BVCEO
IC=1.0mA
40
♦ BVEBO
IE=10µA
6.0
♦ VCE(SAT) IC=10mA, IB=1.0mA
♦ VCE(SAT) IC=50mA, IB=5.0mA
VBE(SAT) IC=10mA, IB=1.0mA
0.65
VBE(SAT) IC=50mA, IB=5.0mA
♦ Enhanced specification
Notes: (1) FR-4 epoxy PC board, standard mounting conditions
(2) FR-4 epoxy PC board with collector mounting pad area of 1 cm²
NPN
TYP
115
60
7.5
0.057
0.100
0.75
0.85
60
40
6.0
200
250
430
-65 to +150
500
290
PNP
TYP
90
55
7.9
0.050
0.100
0.75
0.85
MAX
50
0.100
0.200
0.85
0.95
UNITS
V
V
V
mA
mW
mW
°C
°C/W
°C/W
UNITS
nA
V
V
V
V
V
V
V
R2 (4-January 2010)