CET3904E Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – COMPLEMENTARY PICOminiTM SILICON TRANSISTORS

CET3904E NPN
CET3906E PNP
Central^TM
Semiconductor Corp.
ENHANCED SPECIFICATION
COMPLEMENTARY PICOmini^TM
SILICON TRANSISTORS
DESCRIPTION:
The Central Semiconductor CET3904E / CET3906E
Low VCE(SAT) NPN and PNP Transistors,
respectively, are designed for applications where ultra
small size and power dissipation are the prime
requirements. Packaged in a Tiny Leadless Package
TLP™, these components provide performance
characteristics suitable for the most demanding size
constrained applications.
Top View
Bottom View
SOT-883L CASE
FEATURES:
• Device is Halogen Free by design
• Power Dissipation 250mW
• Low VCE(SAT) 0.1V Typ @ 50mA
• Small, TLP™ 1x0.4mm, SOT-883L Leadless,
Low Profile, Surface Mount Package
MARKING CODES: CET3904E: C
CET3906E: D
APPLICATIONS:
• DC / DC Converters
• Battery powered devices including
Cell Phones and Digital Cameras
MAXIMUM RATINGS: (TA=25°C)
♦ Collector-Base Voltage
Collector-Emitter Voltage
♦ Emitter-Base Voltage
Collector Current
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
Thermal Resistance (Note 2)
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
Θ_JA
Θ_JA
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
NPN
SYMBOL TEST CONDITIONS
MIN
TYP
ICEV
♦ BVCBO
BVCEO
♦ BVEBO
♦ VCE(SAT)
VCE=30V, VEB=3.0V
IC=10μA
IC=1.0mA
IE=10μA
IC=10mA, IB=1.0mA
60
115
40
60
6.0
7.5
0.057
♦ Enhanced specification
60
40
6.0
200
250
430
-65 to +150
500
290
PNP
TYP
90
55
7.9
0.050
MAX
50
0.100
UNITS
V
V
V
mA
mW
mW
°C
°C/W
°C/W
UNITS
nA
V
V
V
V
Notes: (1) FR-4 epoxy PC board, standard mounting conditions
(2) FR-4 epoxy PC board with collector mounting pad area of 1 cm²
R1 (5-MAY 2008)