CEN-U95 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – PNP SILICON DARLINGTON TRANSISTOR

CEN-U95
PNP SILICON
DARLINGTON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CEN-U95 is a
PNP silicon Darlington transistor designed for general
purpose amplifier and driver applications where high
gain and high power dissipation is required.
MARKING: FULL PART NUMBER
TO-202 CASE
APPLICATIONS:
• Designed for general purpose
amplifiers and drivers
FEATURES:
• High Collector Current (2.0A)
• High DC Current Gain (25K MIN)
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCES
VEBO
IC
PD
PD
TJ, Tstg
Θ_JA
Θ_JC
50
40
10
2.0
1.0
10
-65 to +150
125
12.5
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=30V
IEBO
VEB=8.0V
BVCBO
IC=100μA
50
BVCES
IC=100μA
40
BVEBO
IE=10μA
10
VCE(SAT) IC=1.0A, IB=2.0mA
VBE(SAT) IC=1.0A, IB=2.0mA
VBE(ON)
VCE=5.0V, IC=1.0A
hFE
VCE=5.0V, IC=200mA
25K
hFE
VCE=5.0V, IC=500mA
15K
hFE
VCE=5.0V, IC=1.0A
4K
fT
VCE=5.0V, IC=200mA, f=100MHz
50
Cob
VCB=10V, IE=0, f=1.0MHz
MAX
100
100
1.5
2.0
2.0
150K
12
UNITS
V
V
V
A
W
W
°C
°C/W
°C/W
UNITS
nA
nA
V
V
V
V
V
V
MHz
pF
R1 (23-January 2012)