CEN-U05 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – COMPLEMENTARY SILICON POWER TRANSISTORS

CEN-U05 CEN-U06 CEN-U07 NPN
CEN-U55 CEN-U56 CEN-U57 PNP
COMPLEMENTARY SILICON
POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CEN-U05/U55
series types are complementary silicon power
transistors designed for general purpose audio amplifier
applications. These devices are electrically equivalent to
National Semiconductor’s NSDU05, NSDU06, NSDU07,
NSDU55, NSDU56, and NSDU57.
TO-202 CASE
MARKING: FULL PART NUMBER
APPLICATIONS:
• Designed for general purpose high
voltage amplifiers and drivers
FEATURES:
• High Collector-Emitter breakdown voltage
• High 10W power dissipation
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Power Dissipation (TA=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
Θ_JA
Θ_JC
CEN-U05 CEN-U06 CEN-U07
CEN-U55 CEN-U56 CEN-U57
60
80
100
60
80
100
4.0
2.0
10
1.75
-65 to +150
71.4
12.5
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=Rated VCBO
IEBO
VEB=4.0V
BVCEO
IC=1.0mA (CEN-U05, CEN-U55)
60
BVCEO
IC=1.0mA (CEN-U06, CEN-U56)
80
BVCEO
IC=1.0mA (CEN-U07, CEN-U57)
100
VCE(SAT)
IC=250mA, IB=10mA
VCE(SAT)
IC=250mA, IB=25mA
VBE(ON)
VCE=1.0V, IC=250mA
hFE
VCE=1.0V, IC=50mA
80
hFE
VCE=1.0V, IC=250mA
50
hFE
VCE=1.0V, IC=500mA
20
fT
VCE=5.0V, IC=200mA, f=100MHz
50
Cob
VCB=10V, IE=0, f=1.0MHz
MAX
0.1
100
0.5
0.35
1.2
30
UNITS
V
V
V
A
W
W
°C
°C/W
°C/W
UNITS
μA
μA
V
V
V
V
V
V
MHz
pF
R2 (20-January 2012)