CEDM8004VL Datasheet, PDF (1/4 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET

CEDM8004VL
SURFACE MOUNT SILICON
P-CHANNEL
ENHANCEMENT-MODE
MOSFET
SOT-883VL CASE
APPLICATIONS:
• Load/Power switches
• Power supply converter circuits
• Battery powered portable devices
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CEDM8004VL is an
P-Channel Enhancement-mode MOSFET, manufactured
by the P-Channel DMOS process, designed for high speed
pulsed amplifier and driver applications. This MOSFET
offers low rDS(ON) and low threshold voltage.
MARKING CODE: V
COMPLEMENTARY N-CHANNEL: CEDM7004VL
FEATURES:
• ESD protection up to 2kV
• 0.32mm very low package profile
• Low rDS(ON)
• Low threshold voltage
• Logic level compatible
• Small leadless surface mount package
MAXIMUM RATING: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
VDS
VGS
ID
PD
TJ, Tstg
30
8.0
450
100
-65 to +150
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=8.0V, VDS=0
IDSS
VDS=30V, VGS=0
BVDSS
VGS=0, ID=100μA
30
VGS(th)
VDS=VGS, ID=250μA
0.5
VSD
VGS=0, IS=100mA
rDS(ON)
VGS=4.5V, ID=430mA
1.0
rDS(ON)
VGS=2.5V, ID=200mA
1.6
rDS(ON)
VGS=1.8V, ID=100mA
2.6
gFS
VDS =10V, ID=100mA
200
Crss
VDS=25V, VGS=0, f=1.0MHz
8.9
Ciss
VDS=25V, VGS=0, f=1.0MHz
45
Coss
VDS=25V, VGS=0, f=1.0MHz
8.5
Qg(tot)
VDS=10V, VGS=4.5V, ID=1.0A
0.88
Qgs
VDS=10V, VGS=4.5V, ID=1.0A
0.35
Qgd
VDS=10V, VGS=4.5V, ID=1.0A
0.128
MAX
3.0
1.0
1.0
1.1
1.1
2.0
3.3
10
55
15
UNITS
V
V
mA
mW
°C
UNITS
μA
μA
V
V
V
Ω
Ω
Ω
mS
pF
pF
pF
nC
nC
nC
R3 (21-November 2014)