CEDM8004 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CEDM8004
SURFACE MOUNT
P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CEDM8004
is an Enhancement-mode P-Channel Field Effect
Transistor, manufactured by the P-Channel DMOS
Process, designed for high speed pulsed amplifier and
driver applications. This MOSFET offers Low rDS(on)
and Low Theshold Voltage.
MARKING CODE: V
SOT-883L CASE
• Devices are Halogen Free by design
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Devices
FEATURES:
• ESD Protection up to 2kV
• Low rDS(on)
• Low Threshold Voltage
• Logic Level Compatible
• Small, TLP™ 1x0.6mm, SOT-883L, Ultra Low Profile
0.4mm Leadless Surface Mount Package
• Complimentary N-Channel MOSFET CEDM7004
MAXIMUM RATING: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
VDS
VGS
ID
PD
TJ, Tstg
30
8.0
450
100
-65 to +150
UNITS
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=8.0V, VDS=0
IDSS
VDS=30V, VGS=0
BVDSS
VGS=0, ID=100μA
30
VGS(th)
VDS=VGS, ID=250μA
0.5
VSD
VGS=0, IS=100mA
rDS(ON)
VGS=4.5V, ID=430mA
rDS(ON)
VGS=2.5V, ID=200mA
rDS(ON)
VGS=1.8V, ID=100mA
Qg(tot)
VDS=10V, VGS=4.5V, ID=1.0A
0.880
Qgs
VDS=10V, VGS=4.5V, ID=1.0A
0.384
Qgd
gFS
Crss
Ciss
Coss
VDS=10V, VGS=4.5V, ID=1.0A
VDS =10V, ID=100mA
200
VDS=25V, VGS=0, f=1.0MHz
VDS=25V, VGS=0, f=1.0MHz
VDS=25V, VGS=0, f=1.0MHz
0.128
MAX
3.0
1.0
1.0
1.1
1.1
2.0
3.3
UNITS
μA
μA
V
V
V
Ω
Ω
Ω
nC
nC
nC
mS
10
pF
55
pF
15
pF
R2 (10-December 2010)