CEDM7001VL Datasheet, PDF (1/4 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET

CEDM7001VL
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
SOT-883VL CASE
APPLICATIONS:
• Load/Power switches
• DC-DC converters
• Battery powered portable equipment
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CEDM7001VL is an
N-Channel Enhancement-mode MOSFET packaged in the
very low profile SOT-883VL case. The device is designed
for space constrained high speed amplifier and driver
applications where package height is a critical design
element. This MOSFET offers low rDS(ON) and low gate
charge.
MARKING CODE: 7
COMPLEMENTARY P-CHANNEL: CEDM8001VL
FEATURES:
• 100mW Power Dissipation
• 0.32mm very low package profile
• Low rDS(ON)
• Low threshold voltage
• Logic level compatible
• Small leadless surface mount package
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Peak Drain Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
VDS
VGS
ID
IDM
PD
TJ, Tstg
20
10
100
200
100
-65 to +150
UNITS
V
V
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=10V, VDS=0
IDSS
VDS=20V, VGS=0
BVDSS
VGS=0, ID=100μA
20
VGS(th)
VDS=VGS, ID=250μA
0.6
rDS(ON)
VGS=4.0V, ID=10mA
0.9
rDS(ON)
VGS=2.5V, ID=10mA
1.3
rDS(ON)
VGS=1.5V, ID=1.0mA
gFS
VDS=10V, ID=100mA
100
Crss
VDS=3.0V, VGS=0, f=1.0MHz
4.0
Ciss
VDS=3.0V, VGS=0, f=1.0MHz
9.0
Coss
VDS=3.0V, VGS=0, f=1.0MHz
9.5
Qg(tot)
VDS=10V, VGS=4.5V, ID=100mA
0.566
Qgs
VDS=10V, VGS=4.5V, ID=100mA
0.16
Qgd
VDS=10V, VGS=4.5V, ID=100mA
0.08
ton
VDD=3.0V, VGS=2.5V, ID=10mA
50
toff
VDD=3.0V, VGS=2.5V, ID=10mA
75
MAX
1.0
1.0
0.9
3.0
4.0
15
UNITS
μA
μA
V
V
Ω
Ω
Ω
mS
pF
pF
pF
nC
nC
nC
ns
ns
R2 (9-September 2014)