CEDM7001E Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CEDM7001E
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
Top View
Bottom View
SOT-883L CASE
MARKING CODE: CEDM7001E: E
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CEDM7001E is an
Enhancement-mode N-Channel Field Effect Transistor,
manufactured by the N-Channel DMOS Process, designed for
high speed pulsed amplifier and driver applications.
This MOSFET offers Low rDS(on) and Low Theshold Voltage.
FEATURES:
• Power Dissipation 100mW
• Low Threshold Voltage
• Low Package Profile, 0.4mm • Logic Level Compatible
• Low rDS(on)
• Small, TLP™ 1x0.6mm,
SOT-883L Leadless Surface
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter
Mount Package
• Battery Powered Portable
Equipment
Circuits
MAXIMUM RATINGS (TA=25°C)
SYMBOL
UNITS
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
10
V
PRELIMINARY ^{Continuous Drain Current (Steady State)}
Continuous Drain Current
Power Dissipation
Operating and Storage
Junction Temperature
ID
ID
PD
TJ, Tstg
100
200
100
-65 to +150
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP MAX
IGSSF
IGSSR
IDSS
BVDSS
VGS(th)
rDS(ON)
Yfs
Crss
Ciss
VGS=10V, VDS=0V
VGS=10V, VDS=0V
VDS=20V, VGS=0V
VGS=0V, ID=100µA
VDS=VGS, ID=250µA
VGS=4.0V, ID=100mA
VDS =10V, ID=100mA
VDS=3.0V, VGS=0, f=1.0MHz
VDS=3.0V, VGS=0, f=1.0MHz
1.0
1.0
1.0
20
0.6
0.9
1.0 2.0
100
TBD
TBD
mA
mA
mW
°C
UNITS
µA
µA
µA
V
V
Ω
mS
pF
pF
Coss
VDS=3.0V, VGS=0, f=1.0MHz
TBD
pF
ton
VDD=3.0V, VGS=2.5V, ID=10mA
TBD
ns
toff
VDD=3.0V, VGS=2.5V, ID=10mA
TBD
ns
R1 (16-March 2007)