CEDM7001 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CEDM7001
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
SOT-883L CASE
APPLICATIONS:
• Load/Power Switches
• DC/DC Converters
• Battery Powered Portable Equipment
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CEDM7001
is an N-Channel Enhancement-mode Field Effect
Transistor, manufactured by the N-Channel DMOS
Process, designed for high speed pulsed amplifier and
driver applications. This MOSFET offers Low rDS(on)
and Low Theshold Voltage.
MARKING CODE: H
FEATURES:
• 100mW Power Dissipation
• 0.4mm Low Package Profile
• Low rDS(on)
• Low Threshold Voltage
• Logic Level Compatible
• Small, TLP™ 1x0.6mm, SOT-883L Leadless
Surface Mount Package
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Peak Drain Current (tp=10μs)
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
VDS
VGS
ID
IDM
PD
TJ, Tstg
20
10
100
200
100
-65 to +150
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
IGSSF
VGS=10V, VDS=0
IGSSR
VGS=10V, VDS=0
IDSS
VDS=20V, VGS=0
BVDSS
VGS=0, ID=100μA
20
VGS(th)
VDS=VGS, ID=250μA
0.6
rDS(ON)
VGS=4.0V, ID=10mA
rDS(ON)
VGS=2.5V, ID=10mA
rDS(ON)
VGS=1.5V, ID=1.0mA
gfs
VDS =10V, ID=100mA
100
Crss
VDS=3.0V, VGS=0, f=1.0MHz
4.0
Ciss
VDS=3.0V, VGS=0, f=1.0MHz
9.0
Coss
VDS=3.0V, VGS=0, f=1.0MHz
9.5
ton
VDD=3.0V, VGS=2.5V, ID=10mA
50
toff
VDD=3.0V, VGS=2.5V, ID=10mA
75
MAX
1.0
1.0
1.0
0.9
3.0
4.0
15
UNITS
V
V
mA
mA
mW
°C
UNITS
μA
μA
μA
V
V
Ω
Ω
Ω
mS
pF
pF
pF
ns
ns
R6 (5-August 2010)