CDSH270_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON SCHOTTKY DIODE

CDSH270
SILICON SCHOTTKY DIODE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CDSH270 silicon
Schottky diode is designed to replace the 1N270
Germanium diode. Some advantages over the 1N270
are lower forward voltage, lower leakage current, faster
switching speed, and a more robust package.
MARKING: FULL PART NUMBER
DO-35 CASE
MAXIMUM RATINGS: (TA=25 °C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=10ms
Power Dissipation
Operating Junction Temperature
Storage Temperature
Thermal Resistance
SYMBOL
VRRM
IF
IFRM
IFSM
PD
TJ
Tstg
Θ_JA
100
100
350
750
100
-65 to +125
-65 to +150
300
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
TYP
IR
VR=50V
IR
VR=50V, TA=100°C
VF
IF=1.0mA
VF
IF=100mA
0.9
VF
IF=200mA
CJ
VR=10V, f=1.0MHz
1.2
MAX
100
20
0.45
1.0
UNITS
V
mA
mA
mA
mW
°C
°C
°C/W
UNITS
nA
μA
V
V
V
pF
R1 (16-August 2012)