CDM4-600LR Datasheet, PDF (1/4 Pages) Central Semiconductor Corp – Low gate charge

CDM4-600LR
SURFACE MOUNT SILICON
N-CHANNEL
LR POWER MOSFET
4.0 AMP, 600 VOLT
DPAK CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CDM4-600LR is a
600 Volt N-Channel MOSFET designed for high voltage,
fast switching applications such as Power Factor
Correction (PFC), lighting and power inverters. This
UltraMOS^TM MOSFET combines high voltage capability
with ultra low rDS(ON), low threshold voltage, and low
gate charge for optimal efficiency.
MARKING: FULL PART NUMBER
APPLICATIONS:
• Power Factor Correction
• Alternative energy inverters
• Solid State Lighting (SSL)
FEATURES:
• High voltage capability (VDS=600V)
• Low gate charge (Qgs=2.04nC TYP)
• Ultra low rDS(ON) (0.65Ω TYP)
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (Steady State)
ID
Maximum Pulsed Drain Current, tp=10μs
IDM
Continuous Source Current (Body Diode)
IS
Maximum Pulsed Source Current (Body Diode)
ISM
Single Pulse Avalanche Energy (Note 1)
EAS
Power Dissipation
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
Θ_JC
Thermal Resistance
Θ_JA
Note 1: L=30mH, IAS=3.5A, VDD=100V, RG=25Ω, Initial TJ=25°C
600
30
4.0
13.5
4.0
13.5
197
38
-55 to +150
3.29
110
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
I_GSSF, IGSSR VGS=30V, VDS=0
IDSS
VDS=600V, VGS=0
0.065
BVDSS
VGS=0, ID=250μA
600
VGS(th)
VGS=VDS, ID=250μA
2.0
3.25
VSD
VGS=0, IS=4.0A
0.86
rDS(ON)
VGS=10V, ID=2.0A
0.65
Crss
VDS=100V, VGS=0, f=1.0MHz
1.31
Ciss
VDS=100V, VGS=0, f=1.0MHz
328
Coss
VDS=100V, VGS=0, f=1.0MHz
26
MAX
100
1.0
4.0
1.4
0.95
UNITS
V
V
A
A
A
A
mJ
W
°C
°C/W
°C/W
UNITS
nA
μA
V
V
V
Ω
pF
pF
pF
R2 (10-August 2015)