CDM3-800 Datasheet, PDF (1/4 Pages) Central Semiconductor Corp – High voltage capability

CDM3-800
SURFACE MOUNT SILICON
N-CHANNEL
POWER MOSFET
3.0 AMP, 800 VOLT
DPAK CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CDM3-800 is a
800 volt N-Channel MOSFET designed for high voltage,
fast switching applications such as Power Factor
Correction (PFC), lighting and power inverters. This
MOSFET combines high voltage capability with low
rDS(ON), low threshold voltage, and low gate charge for
optimal efficiency.
MARKING: FULL PART NUMBER
APPLICATIONS:
• Power Factor Correction
• Alternative energy inverters
• Solid State Lighting (SSL)
FEATURES:
• High voltage capability (VDS=800V)
• Low gate charge (Qg(tot)=11.3nC TYP)
• Low rDS(ON) (3.8Ω TYP)
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (Steady State)
ID
Maximum Pulsed Drain Current, tp=10μs
IDM
Continuous Source Current (Body Diode)
IS
Maximum Pulsed Source Current (Body Diode)
ISM
Single Pulse Avalanche Energy (Note 1)
EAS
Power Dissipation
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
_JC
Thermal Resistance
_JA
Note 1: L=30mH, IAS=3.15A, VDD=100V, RG=25Ω, Initial TJ=25°C
800
30
3.0
12
3.0
12
173
80
-55 to +150
1.56
110
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=30V, VDS=0
10
IDSS
VDS=800V, VGS=0
0.08
BVDSS
VGS=0, ID=250μA
800
VGS(th)
VGS=VDS, ID=250μA
2.0
3.0
VSD
VGS=0, IS=3.0A
0.98
rDS(ON)
VGS=10V, ID=1.5A
3.8
Crss
VDS=25V, VGS=0, f=1.0MHz
1.5
Ciss
VDS=25V, VGS=0, f=1.0MHz
415
Coss
VDS=25V, VGS=0, f=1.0MHz
44
MAX
100
1.0
4.0
1.4
4.8
UNITS
V
V
A
A
A
A
mJ
W
°C
°C/W
°C/W
UNITS
nA
μA
V
V
V
Ω
pF
pF
pF
R1 (13-May 2015)