CDM2208-800FP Datasheet, PDF (1/4 Pages) Central Semiconductor Corp – High voltage capability

CDM2208-800FP
SILICON
N-CHANNEL POWER MOSFET
8.0 AMP, 800 VOLT
TO-220FP CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CDM2208-800FP
is an 800 volt N-Channel MOSFET designed for high
voltage, fast switching applications such as Power
Factor Correction (PFC), lighting and power inverters.
This MOSFET combines high voltage capability with
low rDS(ON), low threshold voltage, and low gate charge
for optimal efficiency.
MARKING CODE: CDM8-800FP
APPLICATIONS:
• Power Factor Correction
• Alternative energy inverters
• Solid State Lighting (SSL)
FEATURES:
• High voltage capability (VDS=800V)
• Low gate charge (Qg(tot)=24.45nC TYP)
• Low rDS(ON) (1.42Ω TYP)
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (Steady State)
ID
Maximum Pulsed Drain Current, tp=10μs
IDM
Continuous Source Current (Body Diode)
IS
Maximum Pulsed Source Current (Body Diode)
ISM
Single Pulse Avalanche Energy (Note 1)
EAS
Power Dissipation
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
_JC
Thermal Resistance
_JA
Note 1: L=30mH, IAS=5.5A, VDD=135V, RG=25Ω, Initial TJ=25°C
800
30
8.0
32
8.0
32
534
57
-55 to +150
2.19
120
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=30V, VDS=0
30
IDSS
VDS=800V, VGS=0
0.05
BVDSS
VGS=0, ID=250μA
800
VGS(th)
VGS=VDS, ID=250μA
2.0
2.9
VSD
VGS=0, IS=8.0A
0.9
rDS(ON)
VGS=10V, ID=4.0A
1.42
Crss
VDS=25V, VGS=0, f=1.0MHz
2.7
Ciss
VDS=25V, VGS=0, f=1.0MHz
1110
Coss
VDS=25V, VGS=0, f=1.0MHz
104
MAX
100
1.0
4.0
1.4
1.6
UNITS
V
V
A
A
A
A
mJ
W
°C
°C/W
°C/W
UNITS
nA
μA
V
V
V
Ω
pF
pF
pF
R4 (23-December 2015)