CDM2206-800LR Datasheet, PDF (1/5 Pages) Central Semiconductor Corp – Low gate charge

CDM2206-800LR
N-CHANNEL
LR POWER MOSFET
6.0 AMP, 800 VOLT
TO-220 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CDM2206-800LR
is an 800 volt N-Channel MOSFET designed for high
voltage, fast switching applications such as Power
Factor Correction (PFC), lighting and power inverters.
This MOSFET combines high voltage capability with
ultra low rDS(ON), low threshold voltage, and low gate
charge for optimal efficiency.
MARKING CODE: CDM06-800LR
APPLICATIONS:
• Power Factor Correction
• Alternative energy inverters
• Solid State Lighting (SSL)
FEATURES:
• High voltage capability (VDS=800V)
• Low gate charge (Qgs=2.8nC TYP)
• Ultra low rDS(ON) (0.8Ω TYP)
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (Steady State)
ID
Continuous Drain Current (TC=100°C)
ID
Maximum Pulsed Drain Current, tp=10μs
IDM
Continuous Source Current (Body Diode)
IS
Maximum Pulsed Source Current (Body Diode)
ISM
Single Pulse Avalanche Energy (Note 1)
EAS
Power Dissipation
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
_JC
Thermal Resistance
_JA
Note 1: L=79mH, IAS=2.4A, VDD=100V, RG=25Ω, Initial TJ=25°C
800
30
6.0
4.0
24
6.0
24
250
110
-55 to +150
1.14
62.5
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=30V, VDS=0
IDSS
VDS=800V, VGS=0
0.0426
BVDSS
VGS=0, ID=250μA
800
VGS(th)
VGS=VDS, ID=250μA
2.0
3.2
VSD
VGS=0, IS=6.0A
0.89
rDS(ON)
VGS=10V, ID=3.0A
0.8
Crss
VDS=100V, VGS=0, f=1.0MHz
3.3
Ciss
VDS=100V, VGS=0, f=1.0MHz
474.7
Coss
VDS=100V, VGS=0, f=1.0MHz
23.2
MAX
100
1.0
4.0
1.4
0.95
UNITS
V
V
A
A
A
A
A
mJ
W
°C
°C/W
°C/W
UNITS
nA
μA
V
V
V
Ω
pF
pF
pF
R1 (14-June 2016)