CDM22012-800LRFP Datasheet, PDF (1/5 Pages) Central Semiconductor Corp – Low gate charge

CDM22012-800LRFP
N-CHANNEL
LR POWER MOSFET
12 AMP, 800 VOLT
TO-220FP CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CDM22012-800LRFP
is an 800 volt N-Channel MOSFET designed for high
voltage, fast switching applications such as Power
Factor Correction (PFC), lighting and power inverters.
This MOSFET combines high voltage capability with
ultra low rDS(ON), low threshold voltage, and low gate
charge for optimal efficiency.
MARKING CODE: CDM12-800LR
APPLICATIONS:
• Power Factor Correction
• Alternative energy inverters
• Solid State Lighting (SSL)
FEATURES:
• High voltage capability (VDS=800V)
• Low gate charge (Qgs=7.6nC TYP)
• Ultra low rDS(ON) (0.37Ω TYP)
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (Steady State)
ID
Continuous Drain Current (TC=100°C Steady State) ID
Maximum Pulsed Drain Current, tp=10μs
IDM
Continuous Source Current (Body Diode)
IS
Maximum Pulsed Source Current (Body Diode)
ISM
Single Pulse Avalanche Energy (Note 1)
EAS
Power Dissipation
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
_JC
Thermal Resistance
_JA
Note 1: L=79mH, IAS=4.0A, VDD=100V, RG=25Ω, Initial TJ=25°C
800
30
12
7.7
48
12
48
702
40
-55 to +150
3.13
62.5
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=30V, VDS=0
IDSS
VDS=800V, VGS=0
BVDSS
VGS=0, ID=250μA
800
VGS(th)
VGS=VDS, ID=250μA
2.0
VSD
VGS=0, IS=12A
rDS(ON)
VGS=10V, ID=6.0A
0.37
Crss
VDS=100V, VGS=0, f=1.0MHz
9.5
Ciss
VDS=100V, VGS=0, f=1.0MHz
1,090
Coss
VDS=100V, VGS=0, f=1.0MHz
55.2
MAX
100
1.0
4.0
1.4
0.45
UNITS
V
V
A
A
A
A
A
mJ
W
°C
°C/W
°C/W
UNITS
nA
μA
V
V
V
Ω
pF
pF
pF
R1 (7-March 2016)