CDM22011-600LRFP Datasheet, PDF (1/4 Pages) Central Semiconductor Corp – High voltage capability

CDM22011-600LRFP
N-CHANNEL
LR POWER MOSFET
11 AMP, 600 VOLT
TO-220FP CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CDM22011-600LRFP
is a 600 volt N-Channel MOSFET designed for high
voltage, fast switching applications such as Power
Factor Correction (PFC), lighting and power inverters.
This UltraMOS^TM MOSFET combines high voltage
capability with ultra low rDS(ON), low threshold voltage,
and low gate charge for optimal efficiency.
MARKING CODE: CDM11-600LR
APPLICATIONS:
• Power Factor Correction
• Alternative energy inverters
• Solid State Lighting (SSL)
FEATURES:
• High voltage capability (VDS=600V)
• Low gate charge (Qgs=4.45nC TYP)
• Ultra low rDS(ON) (0.3Ω TYP)
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (Steady State)
ID
Maximum Pulsed Drain Current, tp=10μs
IDM
Continuous Source Current (Body Diode)
IS
Maximum Pulsed Source Current (Body Diode)
ISM
Single Pulse Avalanche Energy (Note 1)
EAS
Power Dissipation
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
_JC
Thermal Resistance
_JA
Note 1: L=30mH, IAS=4.0A, VDD=100V, RG=25Ω, Initial TJ=25°C
600
30
11
44
11
44
280
25
-55 to +150
5.0
120
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=30V, VDS=0
IDSS
VDS=600V, VGS=0
0.047
BVDSS
VGS=0, ID=250μA
600
VGS(th)
VGS=VDS, ID=250μA
2.0
3.09
VSD
VGS=0, IS=11A
0.92
rDS(ON)
VGS=10V, ID=5.5A
0.30
Crss
VDS=100V, VGS=0, f=1.0MHz
2.76
Ciss
VDS=100V, VGS=0, f=1.0MHz
763
Coss
VDS=100V, VGS=0, f=1.0MHz
52
MAX
100
1.0
4.0
1.4
0.36
UNITS
V
V
A
A
A
A
mJ
W
°C
°C/W
°C/W
UNITS
nA
μA
V
V
V
Ω
pF
pF
pF
R4 (19-August 2015)