CDM22010-650 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SILICON N-CHANNEL POWER MOSFET

CDM22010-650
SILICON
N-CHANNEL POWER MOSFET
10 AMP, 650 VOLT
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CDM22010-650
is a high current, 650 Volt N-Channel power MOSFET
designed for high voltage, fast switching applications
such as Power Factor Correction (PFC), lighting and
power inverters. This MOSFET combines high voltage
capability with low rDS(ON), low threshold voltage and
low gate charge.
TO-220 CASE
MARKING CODE: CDM10-650
APPLICATIONS:
• Power Factor Correction
• Motor drives
• Alternative energy inverters
• Solid state lighting
FEATURES:
• High voltage capability (VDS=650V)
• Low gate charge (Qgs=8.0nC)
• Low rDS(ON) (0.88Ω)
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (Steady State)
ID
Maximum Pulsed Drain Current, tp=10μs
IDM
Continuous Source Current (Body Diode)
IS
Maximum Pulsed Source Current (Body Diode)
ISM
Single Pulse Avalanche Energy (Note 1)
EAS
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
_JC
Thermal Resistance
Note 1: L=30mH, IAS=6.2A, VDD=50V, RG=25Ω, Initial TJ=25°C
_JA
650
30
10
40
10
40
608
2.0
156
-55 to +150
0.8
62.5
UNITS
V
V
A
A
A
A
mJ
W
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
I_GSSF, IGSSR VGS=30V, VDS=0
10
IDSS
VDS=650V, VGS=0
0.03
BVDSS
VGS=0, ID=250μA
650
VGS(th)
VGS=VDS, ID=250μA
2.0
2.8
VSD
VGS=0, IS=10A
0.9
rDS(ON)
VGS=10V, ID=5.0A
0.88
Crss
VDS=25V, VGS=0, f=1.0MHz
1.2
Ciss
VDS=25V, VGS=0, f=1.0MHz
1168
Coss
VDS=25V, VGS=0, f=1.0MHz
129
MAX
100
1.0
4.0
1.4
1.0
UNITS
nA
μA
V
V
V
Ω
pF
pF
pF
R1 (18-August 2014)