CCLHM080_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT HIGH CURRENT SILICON CURRENT LIMITING DIODE

CCLHM080
THRU
CCLHM150
SURFACE MOUNT
HIGH CURRENT SILICON
CURRENT LIMITING DIODE
SOD-80 CASE
FEATURES:
• Low Cost
• High Reliability
• Smaller Case Size than Competition
• Special Selections Available
• Superior Lot to Lot Consistency
• Leaded Devices Available
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CCLHM080
series types are high current silicon field effect current
regulator diodes designed for applications requiring
a constant current over a wide voltage range. These
devices are manufactured in the cost effective SOD-
80 double plug case which provides many benefits to
the user including space saving and improved thermal
characteristics. Special selections of IP (regulator
current) are available for critical applications.
MARKING CODE: SEE MARKING CODE TABLE ON
FOLLOWING PAGE
MAXIMUM RATINGS: (TL=75°C)
Peak Operating Voltage
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
POV
PD
TJ, Tstg
50
800
-65 to +200
UNITS
V
mW
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
Type
Regulator
Current
(Note 1)
Minimum
Dynamic
Impedance
Minimum
Knee
Impedance
Maximum
Limiting
Voltage
Temperature
Coefficient
(Note 2)
IP @ VT=25V
MIN NOM MAX
(mA) (mA) (mA)
ZT @ VT=25V
MΩ
ZK @ VK=6.0V VL @ IL=0.8 x IP MIN
kΩ
V
TC
%/°C
CCLHM080 6.56 8.2 9.84
0.32
15
3.1
-0.25 to -0.45
CCLHM100 8.0 10.0 12.0
0.17
6.0
3.5
-0.25 to -0.45
CCLHM120 9.6 12.0 14.4
0.08
3.0
3.8
-0.25 to -0.45
CCLHM150 12.0 15.0 18.0
0.03
2.0
Notes:
1) Pulsed Method: Pulse Width (ms) = 27.5 divided by IP NOM (mA)
2) The Temperature Coefficient is measured between + 25°C and +50°C.
4.3
-0.25 to -0.45
R6 (4-January 2010)