CBRHDSH1-100 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT HIGH DENSITY 1 AMP SILICON SCHOTTKY BRIDGE RECTIFIER

CBRHDSH1-100
SURFACE MOUNT
HIGH DENSITY
1 AMP SILICON
SCHOTTKY BRIDGE RECTIFIER
HD DIP CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBRHDSH1-100
is a full wave bridge rectifier in a durable epoxy surface
mount molded case, designed for low voltage full wave
rectification applications. The molding compound used
in this device has UL flammability classification 94V-O.
MARKING CODE: CSH110
FEATURES:
• Low Leakage Current (100nA TYP @ VRRM)
• Low Forward Voltage Drop Schottky Diodes
• High 1.0A Current Rating
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current
Peak Forward Surge Current
Power Dissipation
Operating Junction Temperature
Storage Temperature
Thermal Resistance
SYMBOL
VRRM
VR
VR(RMS)
IO
IFSM
PD
TJ
Tstg
Θ_JA
100
100
71
1.0
20
1.2
-50 to +125
-50 to +150
85
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
IR
IR
BVR
VF
VF
CJ
VR=100V
VR=100V, TA=100°C
IR=150µA
IF=500mA
IF=1.0A
VR=4.0V, f=1.0MHz
0.1
100
650
700
230
MAX
10
20
700
750
UNITS
V
V
V
A
A
W
°C
°C
°C/W
UNITS
µA
mA
V
mV
mV
pF
R3 (4-January 2010)