CBRHD Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – HIGH DENSITY SURFACE MOUNT ½ AMP DUAL IN LINE BRIDGE RECTIFIER

CBRHD SERIES
HIGH DENSITY SURFACE MOUNT
½ AMP DUAL IN LINE
BRIDGE RECTIFIER
Central ^TM
Semiconductor Corp.
FEATURES:
TM
HD
• Truly efficient use of board space, requires
only 42mm² of board space vs. 120mm² of board
space for industry standard 1.0 Amp surface
mount bridge rectifier.
BRIDGE
HDDIP CASE
• 50% higher density (amps/mm²) than the industry
standard 1.0 Amp surface mount bridge rectifier.
• Glass passivated chips for high reliability.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBRHD series types are silicon full wave bridge rectifiers mounted
in a durable epoxy surface mount molded case, utilizing glass passivated chips.
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
CBRHD
SYMBOL -02
Peak Repetitive Reverse Voltage
VRRM
200
DC Blocking Voltage
VR
200
RMS Reverse Voltage
VR(RMS) 140
Average Forward Current (TA=40°C)(1) IO
Average Forward Current (TA=40°C)(2) IO
Peak Forward Surge Current
IFSM
Operating and Storage
Junction Temperature
TJ,Tstg
CBRHD CBRHD
-04
-06
400
600
400
600
280
420
0.5
0.8
30
CBRHD
-10* UNITS
1000 V
1000 V
700 V
A
A
A
-65 to +150
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP MAX
UNITS
VF
IF=400mA (Per Diode)
IR
VR=Rated VRRM
IR
VR=Rated VRRM, TA=125°C
CJ
VR=4.0V, f=1.0MHz
1.0
V
5.0
mA
500
mA
20
pF
(1) Mounted on a Glass-Epoxy P.C.B.
(2) Mounted on a Ceramic P.C.B.
*Available on special order, please consult factory.
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