CBRHD-06_11 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT HIGH DENSITY 0.5 AMP SILICON BRIDGE RECTIFIER

CBRHD SERIES
SURFACE MOUNT
HIGH DENSITY
0.5 AMP
SILICON BRIDGE RECTIFIER
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBRHD series
types are silicon full wave bridge rectifiers mounted in
a durable epoxy surface mount molded case, utilizing
glass passivated chips.
MARKING CODES:
CBRHD-02: CBD2
CBRHD-06: CBD6
CBRHD-04: CBD4
CBRHD-10: CBD10
HD DIP CASE
• This series is UL listed: file number E130224
• Device is Halogen Free by design
FEATURES:
• Efficient use of board space: requires only 42mm² of
board space vs. 120mm² of board space needed for
industry standard 1.0 Amp surface mount bridge rectifier.
• 50% higher density (Amps/mm²) than the industry
standard 1.0 Amp surface mount bridge rectifier.
• Glass passivated chips for high reliability.
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current (TA=40°C) (Note 1)
Average Forward Current (TA=40°C) (Note 2)
Peak Forward Surge Current
Operating & Storage Junction Temperature
CBRHD CBRHD CBRHD CBRHD
SYMBOL -02
-04
-06 -10 * UNITS
VRRM 200
VR
200
VR(RMS) 140
IO
IO
IFSM
TJ, Tstg
400 600 1000 V
400 600 1000 V
280 420 700
V
0.5
A
0.8
A
30
A
-65 to +150
°C
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
TYP
IR
VR=Rated VRRM
IR
VR=Rated VRRM, TA=125°C
VF
IF=400mA
CJ
VR=4.0V, f=1.0MHz
20
Notes: (1) Mounted on Glass-Epoxy PCB.
(2) Mounted on Ceramic PCB.
* Available on special order, please consult factory.
MAX
5.0
500
1.0
UNITS
μA
μA
V
pF
R4 (14-December 2011)