CBRHD-01_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT HIGH DENSITY 0.8 AMP SILICON BRIDGE RECTIFIER

CBRHD-01
SURFACE MOUNT
HIGH DENSITY
0.8 AMP
SILICON BRIDGE RECTIFIER
HD DIP CASE
• This series is UL listed: file number E130224
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBRHD-01 is a
silicon full wave bridge rectifier mounted in a durable
epoxy surface mount molded case, utilizing glass
passivated chips.
MARKING CODE: CBD1
FEATURES:
• Efficient use of board space: requires only 42mm² of board
space vs. 120mm² of board space needed for industry
standard 1.0 Amp surface mount bridge rectifier.
• 50% higher density (Amps/mm²) than the industry standard
1.0 Amp surface mount bridge rectifier.
• Glass passivated chips for high reliability.
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current (TA=40°C) (Note1)
Average Forward Current (TA=40°C) (Note 2)
Peak Forward Surge Current
Operating and Storage Junction Temperature
Thermal Resistance (Note 3)
SYMBOL
VRRM
VR
VR(RMS)
IO
IO
IFSM
TJ, Tstg
Θ_JA
100
100
70
0.5
0.8
30
-65 to +150
85
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
TYP
MAX
IR
VR= 100V
5.0
IR
VR= 100V, TA=125°C
500
VF
IF=400mA
1.0
CJ
VR=4.0V, f=1.0MHz
9.0
Notes: (1) Mounted on Glass-Epoxy PCB.
(2) Mounted on Ceramic PCB.
(3) Mounted on PCB with 0.5” x 0.5” copper pads.
UNITS
V
V
V
A
A
A
°C
°C/W
UNITS
µA
µA
V
pF
R2 (4-January 2010)