CBRHD-01 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – HIGH DENSITY 0.8 AMP DUAL IN LINE BRIDGE RECTIFIER

CBRHD-01
HIGH DENSITY
0.8 AMP DUAL IN LINE
BRIDGE RECTIFIER
Central^TM
Semiconductor Corp.
FEATURES:
• Truly efficient use of board space, requires only
42mm² of board space vs. 120mm² of board
space for industry standard 1.0 Amp surface
mount bridge rectifier.
HD DIP CASE
• This series is UL listed, UL file number E130224
• 50% higher density (amps/mm²) than the
industry standard 1.0 Amp surface mount
bridge rectifier.
• Glass passivated chips for high reliability.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBRHD-01 is a silicon full wave bridge rectifier mounted in a
durable epoxy surface mount molded case, utilizing glass passivated chips.
MARKING CODE: CBRHD-01: CBD1
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current (TA=40°C)(1)
Average Forward Current (TA=40°C)(2)
Peak Forward Surge Current
Operating and Storage
Junction Temperature
Thermal Resistance (3)
SYMBOL
VRRM
VR
VR(RMS)
IO
IO
IFSM
TJ,Tstg
Θ_JA
100
100
70
0.5
0.8
30
-65 to +150
85
UNITS
V
V
V
A
A
A
°C
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
IR
VR= 100V
IR
VR= 100V, TA=125°C
VF
IF=400mA
CJ
VR=4.0V, f=1.0MHz
9.0
(1) Mounted on a Glass-Epoxy P.C.B.
(2) Mounted on a Ceramic P.C.B.
(3) Mounted on P.C.B. with 0.5” x 0.5” copper pads.
MAX
5.0
500
1.0
UNITS
µA
µA
V
pF
R0 (11-February 2005)