CBR1F-D020S_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT 1 AMP FAST RECOVERY SILICON BRIDGE RECTIFIER

CBR1F-D020S SERIES
SURFACE MOUNT
1 AMP FAST RECOVERY
SILICON BRIDGE RECTIFIER
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBR1F-D020S
Series types are fast recovery, full wave bridge
rectifiers mounted in a durable epoxy surface mount
molded case, utilizing glass passivated chips.
MARKING: FULL PART NUMBER
SMDIP CASE
MAXIMUM RATINGS:
(TA=25°C unless otherwise specified)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current (TA=40°C)
Peak Forward Surge Current
Rating for Fusing (t<8.35ms)
Operating and Storage
Junction Temperature
CBR1F-
SYMBOL D020S
VRRM
200
VR
200
VR(RMS) 140
IO
IFSM
I²t
TJ, Tstg
CBR1F-
D040S
400
400
280
CBR1F-
D060S
600
600
420
1.0
50
3.74
CBR1F-
D080S
800
800
560
-65 to +150
CBR1F-
D100S
1000
1000
700
UNITS
V
V
V
A
A
A²s
°C
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
TYP
IR
VR=Rated VRRM
IR
VR=Rated VRRM, TA=125°C
VF
IF=1.0A
trr
IF=0.5A, IR=1.0A, Rec. to 0.25A (200V, 300V, 400V)
trr
IF=0.5A, IR=1.0A, Rec. to 0.25A (600V)
trr
IF=0.5A, IR=1.0A, Rec. to 0.25A (800V, 1000V)
CJ
VR=4.0V, f=1.0MHz
25
MAX
5.0
0.5
1.3
200
300
500
UNITS
µA
mA
V
ns
ns
ns
pF
R1 (4-January 2010)