CBR1F-D020S Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – 1.0 AMP DUAL IN LINE FAST RECOVERY SILICON BRIDGE RECTIFIER

CBR1F-D020S SERIES
1.0 AMP DUAL IN LINE
FAST RECOVERY
SILICON BRIDGE RECTIFIER
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBR1F-D020S
Series types are fast recovery, full wave bridge rectifiers
mounted in a durable epoxy surface mount molded
case, utilizing glass passivated chips. To order devices
on tape and reel (1,000/13” reel) add TR13 suffix.
MARKING CODE: FULL PART NUMBER
SMDIP CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise specified)
CBR1F- CBR1F- CBR1F- CBR1F- CBR1F-
SYMBOL D020S D040S D060S D080S D100S
Peak Repetitive Reverse Voltage
VRRM
200
DC Blocking Voltage
VR
200
RMS Reverse Voltage
VR(RMS) ₁₄₀
Average Forward Current (TA=40°C) IO
Peak Forward Surge Current
Rating for Fusing (t<8.35ms)
IFSM
I²t
Operating and Storage
Junction Temperature
TJ,Tstg
400
600
800
400
600
800
280
420
560
1.0
50
3.74
-65 to +150
1000
1000
700
UNITS
V
V
V
A
A
A²s
°C
ELECTRICAL CHARACTERISTICS PER DIODE (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IR
VR=Rated VRRM
IR
VR=Rated VRRM, TA=125°C
VF
IF=1.0A
trr (200V thru 400V) IF=0.5A, IR=1.0A, Recov. to 0.25A
trr (600V)
IF=0.5A, IR=1.0A, Recov. to 0.25A
trr (800V, 1000V)
IF=0.5A, IR=1.0A, Recov. to 0.25A
CJ
VR=4.0V, f=1.0MHz
25
MAX
5.0
0.5
1.3
200
300
500
UNITS
µA
mA
V
ns
ns
ns
pF
R0 (14-January 2003)