CBR10F-010P_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – FAST RECOVERY SILICON BRIDGE RECTIFIERS

CBR10F-010P SERIES
FAST RECOVERY
SILICON BRIDGE RECTIFIERS
10 AMP, 100 THRU 600 VOLT
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBR10F-010P series
devices are silicon, single phase, full wave bridge rectifiers
designed for fast recovery applications. The molded
epoxy case has a built-in metal baseplate for heat sink
mounting. The device utilizes standard 0.25” FASTON
terminals.
CASE FP
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL -010P
Peak Repetitive Reverse Voltage
VRRM 100
DC Blocking Voltage
VR
100
RMS Reverse Voltage
VR(RMS) 70
Average Forward Current (TC=60°C)
IO
Peak Forward Surge Current
IFSM
RMS Isolation Voltage (case to lead)
Viso
Operating and StorageJunction Temperature
TJ, Tstg
Thermal Resistance
Θ_JC
CBR10F
-020P -040P
200
400
200
400
140
280
10
200
2500
-65 to +150
1.5
-060P
600
600
420
UNITS
V
V
V
A
A
Vac
°C
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C)
SYMBOL TEST CONDITIONS
MIN
IR
VR=Rated VRRM
VF
IF=5.0A
trr
IF=0.5A, IR=1.0A, Irr=0.25A (100V, 200V, 400V)
trr
IF=0.5A, IR=1.0A, Irr=0.25A (600V)
MAX
10
1.3
200
350
UNITS
μA
V
ns
ns
R1 (4-November 2013)